| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of improving performance or the like of the semiconductor device by inhibiting a variation in thickness of a sidewall film of a gate electrode provided in the semiconductor device and improving flatness of a surface of the sidewall film. SOLUTION: First heat treatment takes place on at least one gate structure 13 comprising an inter-electrode insulation film 4 between a floating gate electrode 3 containing impurities and a control gate electrode 10 and provided on a semiconductor substrate 1 via a tunnel insulation film 2. After impurities are implanted toward a front layer of the semiconductor substrate 1 having the gate structure 13 on which the first heat treatment takes place, a non-monocrystal silicon film 18 without impurities added is provided to cover the gate structure 13. After an insulation film 19 is further provided to cover the silicon film 18, second heat treatment takes place on the silicon film 18 and the gate structure 13 covered with the insulation film 19. COPYRIGHT: (C)2009,JPO&INPIT
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