| 摘要 |
<p>A semiconductor device and method of manufacturing the same is provided to improve the refresh characteristic and the performance characteristic of the DRAM cell transistor by blocking an affect on a gate operation in which the passing gate is adjacent. In a semiconductor substrate(300), a trench(T) type isolation film(302) defining an active area is formed. A recess gate comprises the passing gate(PG) arranged on the isolation film and the operation gate(G) arranged on the active area. A groove(H) contacting with both edges is formed along with the longitudinal direction of the active area. A filling isolation layer(304) is formed within the groove. Junction areas(312a, 312b) are formed through the ion injection process within the both sides of the active area of an operation gate. At this time, the junction area is extended and formed between the passing gate(PG). Therefore, it has a similar depth to the bottom surface of the operation gate, or it has the more.</p> |
