| 摘要 |
A semiconductor device capable of preventing short between bit line and bottom electrode, and manufacturing method thereof are provided to prevent damage of bottom electrode by etching width of open region like capacitor shape when forming open region. A landing plug(212) between gates(204) is formed on a semiconductor substrate(200). An etching stop film(214) and a first insulation film(216) are formed on the semiconductor substrate. A trench is formed by etching a top of the first insulation film. A storage node contact hole is formed by etching the first insulation film and the etching stop film in order to expose the landing plug. A storage node contact plug(220) is formed in the storage node contact hole. A second insulation film is formed on a top of the storage node contact plug and the first insulation film. An open region is formed with a formation connected to a first oval and a second oval smaller than the first ellipse. A bottom electrode(226) is formed by forming a conductive film in side and bottom of the open region.
|
