发明名称 |
HIGH PERFORMANCE HEAT SHIELDS WITH REDUCED CAPACITANCE |
摘要 |
Methods and structures for capacitively isolating a heat shield from a handle wafer of a silicon-on-insulator substrate. A contact plug is located in a trench extending through a trench isolation region in a device layer of the silicon-on-insulator substrate and at least partially through a buried insulator layer of the silicon-on-insulator substrate. The heat shield is located in an interconnect structure, which also includes a wire coupling the heat shield with the contact plug. An isolation structure is positioned between the contact plug and a portion of the handle wafer. The isolation structure provides the capacitive isolation. |
申请公布号 |
US2016379999(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
US201514748355 |
申请日期 |
2015.06.24 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Chou Anthony I.;Lee Sungjae;Lukaitis Joseph M.;Robison Robert R. |
分类号 |
H01L27/12;H01L21/3205;H01L21/22;H01L23/522;H01L23/373 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Grand Cayman KY |