发明名称 |
Secure Protection Block and Function Block System and Method |
摘要 |
An embodiment includes an apparatus comprising: power supply pins to couple to a power supply; a protection block, including a first transistor, to: (a) determine whether voltage from the power supply pins meets a predetermined condition, and (b) in response to determining whether the predetermined condition is met, communicate a first communication to at least one of first and second function blocks; and the first function block, coupled to the protection block and the power supply pins, including a second transistor and at least one fuse that corresponds to a security key; wherein the first transistor is at least one of: (a) connected in series with at least one other transistor, and (b) having a first gate oxide breakdown voltage that is greater than a second gate oxide breakdown voltage of the second transistor. Other embodiments are described herein. |
申请公布号 |
US2016372913(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201514746514 |
申请日期 |
2015.06.22 |
申请人 |
Intel Corporation |
发明人 |
Aftabjahani Seyed-Abdollah;Das Amitabh |
分类号 |
H02H3/20 |
主分类号 |
H02H3/20 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
power supply pins to couple to a power supply; and a protection block, including a first transistor, to: (a) determine whether voltage from at least one of the power supply pins meets a predetermined condition, and (b) in response to determining whether the predetermined condition is met, communicate a first communication to at least one of first and second function blocks; wherein the first function block, coupled to the protection block and the power supply pins, includes a second transistor and at least one fuse that corresponds to a security key; wherein the first transistor is at least one of: (a) directly connected with at least one other transistor, and (b) having a first gate oxide breakdown voltage that is greater than a second gate oxide breakdown voltage of the second transistor. |
地址 |
Santa Clara CA US |