发明名称 Silicon-on-insulator biosensor devices
摘要 Semiconductor sensor comprises a field effect transistor with a gate produced from SOI substrates with the aid of standard and advanced sub-microm technology. The conductivity in the transistor is limited to a thin conducting layer close to the surface which is insulated from the substrate by a trenched oxide. The transistor is covered with a functional surface layer made e.g. from immobilized molecules.
申请公布号 GB2390938(B) 申请公布日期 2005.06.22
申请号 GB20030011210 申请日期 2003.05.15
申请人 * FUJITSU LIMITED 发明人 GERHARD * ABSTREITER;MARC UWE * TORNOW;KARIN * BUCHHOLZ;SEBASTIAN MARKUS * LUBER;ERICH * SACKMAN;ANDREAS RICHARD * BAUSCH;MICHAEL GEROLD HELLMUT * NIKOLAIDES;STEFAN * RAUSCHENBACH
分类号 G01N27/414;(IPC1-7):G01N27/414;H01L51/30;H01L29/423;H01L27/12;H01L21/336 主分类号 G01N27/414
代理机构 代理人
主权项
地址