发明名称 |
Silicon-on-insulator biosensor devices |
摘要 |
Semiconductor sensor comprises a field effect transistor with a gate produced from SOI substrates with the aid of standard and advanced sub-microm technology. The conductivity in the transistor is limited to a thin conducting layer close to the surface which is insulated from the substrate by a trenched oxide. The transistor is covered with a functional surface layer made e.g. from immobilized molecules. |
申请公布号 |
GB2390938(B) |
申请公布日期 |
2005.06.22 |
申请号 |
GB20030011210 |
申请日期 |
2003.05.15 |
申请人 |
* FUJITSU LIMITED |
发明人 |
GERHARD * ABSTREITER;MARC UWE * TORNOW;KARIN * BUCHHOLZ;SEBASTIAN MARKUS * LUBER;ERICH * SACKMAN;ANDREAS RICHARD * BAUSCH;MICHAEL GEROLD HELLMUT * NIKOLAIDES;STEFAN * RAUSCHENBACH |
分类号 |
G01N27/414;(IPC1-7):G01N27/414;H01L51/30;H01L29/423;H01L27/12;H01L21/336 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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