发明名称 Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
摘要 A MEMS device ( 100 ) is provided that includes a handle layer ( 108 ) having a sidewall ( 138 ), a cap ( 132 ) overlying said handle layer ( 108 ), said cap ( 132 ) having a sidewall ( 138 ), and a conductive material ( 136 ) disposed on at least a portion of said sidewall of said cap ( 138 ) and said sidewall of said handle layer ( 138 ) to thereby electrically couple said handle layer ( 108 ) to said cap ( 132 ). A wafer-level method for manufacturing the MEMS device from a substrate ( 300 ) comprising a handle layer ( 108 ) and a cap ( 132 ) overlying the handle layer ( 108 ) is also provided. The method includes making a first cut through the cap ( 132 ) and at least a portion of the substrate ( 300 ) to form a first sidewall ( 138 ), and depositing a conductive material ( 136 ) onto the first sidewall ( 138 ) to electrically couple the cap ( 132 ) to the substrate ( 300 ).
申请公布号 US2006286707(A1) 申请公布日期 2006.12.21
申请号 US20050158793 申请日期 2005.06.21
申请人 HOOPER STEPHEN R;DESAI HEMANT D;MCDONALD WILLIAM G;SALIAN ARVIND S 发明人 HOOPER STEPHEN R.;DESAI HEMANT D.;MCDONALD WILLIAM G.;SALIAN ARVIND S.
分类号 B81C99/00;H01L21/00;H01L29/84 主分类号 B81C99/00
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