发明名称 Two-beam semiconductor laser apparatus
摘要 A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD 1 and LD 2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD 1 and LD 2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.
申请公布号 US2006285476(A1) 申请公布日期 2006.12.21
申请号 US20060575680 申请日期 2006.04.13
申请人 WATANABE YASUHIRO;UEYAMA KOUJI;AKIYOSHI SHINICHIROU 发明人 WATANABE YASUHIRO;UEYAMA KOUJI;AKIYOSHI SHINICHIROU
分类号 G11B7/00;H01S5/02;H01S5/022;H01S5/40 主分类号 G11B7/00
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