发明名称 PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING
摘要 <p>The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.</p>
申请公布号 EP1747590(A2) 申请公布日期 2007.01.31
申请号 EP20050856638 申请日期 2005.04.22
申请人 NANOSOLAR, INC. 发明人 ROSCHEISEN, MARTIN, R.;SAGER, BRIAN, M.
分类号 H01L31/00;A61K9/16;A61K9/50;B05D5/12;B82B3/00;H01L21/00;H01L31/0256;H01L31/0392;H01L31/18 主分类号 H01L31/00
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