发明名称 |
Semiconductor light emitting device |
摘要 |
A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0<x≦1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer. |
申请公布号 |
US9525106(B2) |
申请公布日期 |
2016.12.20 |
申请号 |
US201514676750 |
申请日期 |
2015.04.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Maeng Jong Sun;Kim Jun Youn;Choi Sung Min;Yoo Kyung Ho |
分类号 |
H01L29/06;H01L33/32;H01L33/06;H01L33/14 |
主分类号 |
H01L29/06 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A semiconductor light emitting device comprising:
an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element, wherein: the electron blocking; layer is formed of AlxGa1-xN, where 0<x≦1, a plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer, and content of aluminum (Al) of the plurality of first regions changes in a direction from an interface of the electron blocking layer contiguous with the active layer toward an interface of the electron blocking layer contiguous with the p-type semiconductor layer. |
地址 |
Suwon-Si, Gyeonggi-Do KR |