发明名称 Plating equipment for solar cell wafer using electroplating and light-induced plating jointly and method of the same
摘要 The present invention relates to plating equipment and method for a solar cell wafer using electroplating and light-induced plating jointly. The plating equipment includes a jig allowing a wafer (1), that is a body to be plated, to be vertically immersed into a plating solution at a center of a plating bath (209), a first plating unit (200) comprising a plurality of anode members (210) symmetrically disposed on both sides of the plating bath (209) facing the wafer (1), the first plating unit performing electroplating; and a second plating unit (300) disposed in a light source receiving unit (320) physically blocked from the first plating unit (200), the second plating unit (300) being disposed at a rear side of the anode members (210) to perform light-induced plating by using an light emitting diode (LED) lamp (301) irradiating light onto the wafer (1).
申请公布号 US9525096(B2) 申请公布日期 2016.12.20
申请号 US201414174736 申请日期 2014.02.06
申请人 HOJIN PLATECH CO., LTD. 发明人 Kim Pan Soo;Lee Duk Haeng;Jung Woon Suk
分类号 C25D7/12;H01L31/18;C25D17/00;H01L31/0224;C25D17/06;C23C18/16;H01L21/67;C25D5/00;C25D17/12;C25D21/12;C25D5/08 主分类号 C25D7/12
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A plating equipment comprising: a jig holding a wafer to be plated at a center of a plating bath such that the wafer is vertically immersed into a plating solution in the plating bath; a first plating unit including a first plurality of anode members disposed on a first side of the plating bath facing the wafer, and a second plurality of anode members disposed on a second side of the plating bath facing the wafer, the first plating unit performing electroplating; and a second plating unit disposed in a light source receiving unit physically blocked from the first plating unit, the second plating unit being disposed behind the first plurality of anode members and the second plurality of anode members to perform light-induced plating by using a light emitting diode (LED) lamp irradiating light onto the wafer; wherein the first plurality of anode members and the second plurality of anode members are symmetrically disposed with respect to the wafer; wherein each member of the first plurality of anode members has a same width and is spaced apart at the same distance as a width of other members of the first plurality of anode members, and wherein each member of the second plurality of anode members has a same width and is spaced apart at the same distance as a width of other members of the second plurality of anode members.
地址 Ansan-Si KR