发明名称 THIN FILM PIEZOELECTRIC RESONATOR AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film piezoelectric resonator of which the strength is improved, and a manufacturing method thereof. <P>SOLUTION: The present invention relates to a thin film piezoelectric resonator characterized by including: a substrate 10 having openings 10a-10g and holes 101-104; a resonance unit 13 comprising lower electrode wiring 14a-14d at the openings 10a-10g of the substrate 10, a piezoelectric film 16 over the lower electrode wiring 14a-14d, and upper electrode wiring 17a-17d facing the lower electrode wiring 14a-14d with the piezoelectric film 16 between; a cover layer 22 covering the resonance unit 13 separately from a part of the upper electrode wiring 17a-17d so as to cover a cavity 22a connected to the holes 101-104 above the upper electrode wiring 17a-17d; and a resin layer 23 formed on the cover layer 22. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007325205(A) 申请公布日期 2007.12.13
申请号 JP20060156259 申请日期 2006.06.05
申请人 TOSHIBA CORP 发明人 KAWAMURA YOSHIHISA
分类号 H03H9/17;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/23;H03H3/02 主分类号 H03H9/17
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