| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated compound semiconductor light-emitting device excellent in in-plane uniformity of light emission intensity and capable of large-area light emission like a surface light source. <P>SOLUTION: The integrated compound semiconductor light-emitting device has a plurality of light-emitting units. Each of the light-emitting units has at least a thin-film crystal layer having a first conductivity-type semiconductor layer 24, an active layer structure 25 and a second conductivity-type semiconductor layer 26. A main light extracting direction is the first conductivity-type semiconductor layer 24 side. The first and second conductivity-type side electrodes 27, 28 are formed on the opposite side to that. The light-emitting units 11 are electrically separated from each other by inter-light-emitting unit separating trenches 12. The light-emitting units have a plurality of light-emitting points including the separated active layer structure 25, and an optically coupling layer 23 and a buffer layer 22 are commonly provided between the plurality of light-emitting units 11 from the first conductivity-type semiconductor layer 24 to the main light extracting direction side. <P>COPYRIGHT: (C)2008,JPO&INPIT |
