| 摘要 |
PROBLEM TO BE SOLVED: To significantly suppress the leakage current to a substrate by surely suppressing the operation of a parasitic PNP transistor when a diode element is ON in a semiconductor integrated circuit device having a built-in spark-killer diode suitable for protecting an output transistor. SOLUTION: In the semiconductor integrated circuit device, parasitic resistance R1 is made to be larger than parasitic resistance R2 by forming a P+ diffused region 34 and a parasitic resistance adjustment region 32 on the surface of a semiconductor layer in such a way that the both regions partially overlap. The parasitic PNP transistor TR2 operation which is the cause of the leakage current to the substrate 21 is thereby suppressed, and the leakage current is significantly reduced. COPYRIGHT: (C)2008,JPO&INPIT
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