摘要 |
The invention relates to a radiation-emitting optoelectronic semiconductor component, comprising a radiation passage surface (S), through which light (R) produced during the operation of the semiconductor component passes, a first barrier layer (1), which is arranged on a top side of the radiation passage surface (S) and is in direct contact with the radiation passage surface (S) there at least at some points, a conversion element (3), which is arranged on the top side of the first barrier layer (1) facing away from the radiation passage surface (S), a second barrier layer (2), which is arranged on the top side of the conversion element (3) facing away from the first barrier layer (1) and on the top side of the first barrier layer (1), wherein the first barrier layer (1) and the second barrier layer (2) together completely enclose the conversion element (3), and the first barrier layer (1) and the second barrier layer (2) are in direct contact with each other at some points. |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
SCHWARZ, THOMAS;SINGER, FRANK;ILLEK, STEFAN;ZITZLSPERGER, MICHAEL;GÖÖTZ, BRITTA |