| 摘要 |
The method for enhancing the performance of a transistor may be provided that includes forming a nano-wire on a substrate, applying strain to the nano-wire to bend the nano-wire, forming a source electrode, a drain electrode and a gate electrode, and manufacturing a transistor including the bent nano-wire formed by the applying of the strain, and source electrode, drain electrode and gate electrode formed by the forming of the electrodes. Through the above configuration, a silicon device that operates in a terahertz band can be more easily manufactured, and it is possible to evaluate whether or not the silicon device operates as a plasma-wave transistor. |
