| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth method of a SGGG single crystal substrate having a homogeneous distribution of a lattice constant at a crystal top part and a crystal bottom part of a CaMgZr substitution type gadolinium gallium garnet (SGGG) single crystal grown by a Czochralski method, and a SGGG single crystal substrate.SOLUTION: A SGGG single crystal is grown by using a raw material melt expressed by a composition formula (1), setting a solidification ratio of the raw material melt in time of growth [(crystal weight÷raw material weight)×100] to a range of 37% - 47%, and using a Czochralski method. The SGGG single crystal has a lattice constant of 12.4945 - 12.4975 Å, and a difference in lattice constant of 0.0002 Å or less on a same position specified on a two-dimensional coordinate within arbitrary two planes (for example, a crystal top part 11 and a crystal bottom part 12) orthogonal to a growth direction of the single crystal. GdCa)(GaMgZr)O(1)[0.320≤x≤0.330, and 0.308≤y≤0.320]SELECTED DRAWING: Figure 2 |
