SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

摘要

A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

主权项

1. A method of manufacturing a silicon solar cell using a screen printing method comprising:
providing a silicon semiconductor substrate doped with first conductive impurities; forming an emitter layer doped with second conductive impurities on a front surface of the silicon semiconductor substrate, the second conductive impurities having polarities opposite polarities of the first conductive impurities; forming an etching mask pattern using the screen printing method at a position where an upper electrode on the emitter layer is connected to the emitter layer; forming a selective emitter layer having a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities by an etch-back process on the emitter layer using the etching mask pattern as a mask; removing the etching mask pattern remaining after the etch-back process is performed; forming an anti-reflective layer on the selective emitter layer; forming the upper electrode on the first emitter layer to pass through the anti-reflective layer and connecting the upper electrode to the first emitter layer at a formation position of the upper electrode; and forming a lower electrode to a lower portion of the silicon semiconductor substrate.