发明名称 |
SEMICONDUCTOR DEVICES INCLUDING CONTACT STRUCTURES THAT PARTIALLY OVERLAP SILICIDE LAYERS |
摘要 |
Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes an isolation layer defining active portions of the substrate that are spaced apart from each other in a direction. The semiconductor device includes an epitaxial layer on the active portions. The semiconductor device includes a metal silicide layer on the epitaxial layer. Moreover, the semiconductor device includes a contact structure that only partially overlaps the metal silicide layer on the epitaxial layer. Related methods of forming semiconductor devices are also provided. |
申请公布号 |
US2016308004(A1) |
申请公布日期 |
2016.10.20 |
申请号 |
US201615006717 |
申请日期 |
2016.01.26 |
申请人 |
LEE Do-Sun;SOHN Chang-Woo;KIM Chul-Sung;MAEDA Shigenobu;CHOI Young-Moon;CHOI Hyo-Seok;HYUN Sang-Jin |
发明人 |
LEE Do-Sun;SOHN Chang-Woo;KIM Chul-Sung;MAEDA Shigenobu;CHOI Young-Moon;CHOI Hyo-Seok;HYUN Sang-Jin |
分类号 |
H01L29/08;H01L29/165;H01L29/161;H01L29/78;H01L29/06 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |