| 发明名称 |
Silicide Regions in Vertical Gate All Around (VGAA) Devices and Methods of Forming Same |
| 摘要 |
An embodiment semiconductor device includes a nanowire extending upwards from a semiconductor substrate, a source/drain region in the nanowire, and a channel region in the nanowire over the source/drain region. The source/drain region further extends into the semiconductor substrate past edges of the nanowire. The semiconductor device further includes a gate structure encircling the channel region and a silicide in an upper portion of the source/drain region. A sidewall of the silicide is aligned with a sidewall of the gate structure. |
| 申请公布号 |
US2016308002(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615194238 |
申请日期 |
2016.06.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yang Kai-Chieh;Lien Wai-Yi |
| 分类号 |
H01L29/06;H01L29/78;H01L29/45;H01L29/66;H01L29/417;H01L29/423 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a nanowire extending upwards from a semiconductor substrate; a first source/drain region in the nanowire, wherein the first source/drain region further extends into the semiconductor substrate past edges of the nanowire; and a channel region in the nanowire over the first source/drain region; a gate structure encircling the channel region; and a silicide in an upper portion of the first source/drain region, wherein the silicide extends to a sidewall of the gate structure. |
| 地址 |
Hsin-Chu TW |
