| 发明名称 |
SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH |
| 摘要 |
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed. |
| 申请公布号 |
US2016307768(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615194456 |
申请日期 |
2016.06.27 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
CHEN Hao;Ying Chentsau (Chris);Nemani Srinivas D.;Yieh Ellie Y. |
| 分类号 |
H01L21/308;H01L21/033;H01L21/306;H01L21/3065;C23C16/50;H01L21/3213;H01L21/67;C23C16/04;C23C16/455;H01L21/02;H01L21/311 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Santa Clara CA US |
