METHOD OF ETCHING SEMICONDUCTOR STRUCTURES WITH ETCH GAS

摘要

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

主权项

1. A method for plasma etching a silicon-containing layer on a substrate, the method comprising,
introducing a vapor of a compound into a chamber containing the silicon-containing layer on a substrate, the compound having a formula selected from the group consisting of: R1—SH R2—S—R3 C2F4S2 (CAS 1717-50-6)wherein R1, R2, and R3 is each independently a saturated C1 to C4 alkyl or fluoroalkyl group and R2 and R3 may be joined to form a 5 or 6 member S-containing ring;
introducing an inert gas into the chamber; generating a plasma to produce an activated vapor from the vapor; and removing volatile by-product from the chamber, wherein the activated vapor selectively reacts with the silicon-containing layer to form the volatile by-product.