STRUCTURE AND METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE

摘要

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The semiconductor device structure includes spacers over opposite sidewalls of the gate stack. The spacers and the gate stack surround a recess over the gate stack. The semiconductor device structure includes a first insulating layer over the gate stack and an inner wall of the recess. The semiconductor device structure includes a second insulating layer over the first insulating layer. Materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate; a gate stack over the semiconductor substrate, wherein the gate stack comprises a gate dielectric layer and a metal gate; spacers over opposite sidewalls of the gate stack, wherein the spacers and the gate stack surround a recess over the gate stack; a first insulating layer over the gate stack and an inner wall of the recess, wherein a top surface of the gate dielectric layer is between the semiconductor substrate and a bottom surface of the first insulating layer; and a second insulating layer over the first insulating layer, wherein materials of the first insulating layer and the second insulating layer are different, and a first thickness of the first insulating layer is less than a second thickness of the second insulating layer.