| 发明名称 |
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal electrode, includes forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce a potential difference generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer. |
| 申请公布号 |
US2016307756(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615197845 |
申请日期 |
2016.06.30 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
FUJII Takeshi;SATO Mariko;INAMOTO Takuro |
| 分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a silicon carbide semiconductor device including a p-type silicon carbide semiconductor body and a metal electrode having an electrical contact therebetween, the method comprising:
forming on a surface of the p-type silicon carbide semiconductor body, a graphene layer so as to reduce an electrical potential drop generated in a conjunction interface between the p-type silicon carbide semiconductor body and the metal electrode; forming an insulator layer comprising a hexagonal boron nitride on a surface of the graphene layer; and forming the metal electrode on a surface of the insulation layer. |
| 地址 |
Kawasaki-shi JP |
