SUPER-THIN CHANNEL TRANSISTOR STRUCTURE, FABRICATION, AND APPLICATIONS

摘要

Taught herein are transistor devices that utilize super-thin channels supported by dielectric bodies embedded in a semiconductor substrate. The super-thin channel is not subjected to a high-temp anneal process, and thus is not high doped. Rather, the source and drain form Schottky junctions with the channel. The lack of a high-temp anneal enables the transistors to be built on top of one another in a tiered structure without melting the lower tiers during fabrication. The ability to fabricate transistors in a tiered structure makes available a number of novel devices and architectuires.