CONFORMAL STRIPPABLE CARBON FILM FOR LINE-EDGE-ROUGHNESS REDUCTION FOR ADVANCED PATTERNING

摘要

Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

主权项

1. A method of processing a substrate, comprising:
forming a pattern in a photoresist layer on a hardmask layer, the pattern forming one or more features which expose a portion of the hardmask layer; depositing a conformal organic layer directly on the photoresist layer, the deposition of the conformal organic layer comprising:
introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber;generating a plasma in the processing chamber to deposit a conformal organic layer on the patterned features and the exposed portion of the hardmask; removing the conformal organic layer from the bottom portion by an etch process; etching the exposed portion of the hardmask layer to form a recess in the hardmask layer; and removing the remaining portions of the conformal organic layer and patterned photoresist layer simultaneously by a plasma ashing method.