| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of suppressing after-corrosion of aluminum wiring by a simple process.SOLUTION: An after-corrosion suppression processing method of an aluminum wiring semiconductor substrate by HO plasma includes a process for generating argon plasma by introducing argon gas into a processing chamber housing the aluminum wiring semiconductor substrate subjected to etching, and a process for producing Ar-HO plasma by introducing HO into the argon plasma, after it is stabilized. Since the Ar plasma is generated previously, and HO is introduced therein, the non-dissociated HO itself adheres onto the aluminum wiring semiconductor substrate, thus suppressing promotion of growth of residual deposits.SELECTED DRAWING: Figure 4 |
