FIN FIELD-EFFECT TRANSISTOR GATED DIODE

摘要

The invention provides a semiconductor device. The semiconductor device includes a fin field effect transistor (finFET) array including finFET units. Each of the finFET units includes a substrate having a fin along a first direction. A first metal strip pattern and a second metal strip pattern are formed on the fin, extending along a second direction that is different from the first direction. The first and second metal strip patterns are conformally formed on opposite sidewalls and a top surface of the fin, respectively. A first contact and a second contact are formed on the fin. The first and second metal strip patterns are disposed between the first and second contacts. A first dummy contact is formed on the fin, sandwiched between the first and second metal strip patterns.

主权项

1. A semiconductor device, comprising:
a fin field effect transistor (finFET) array comprising finFET unit cells, wherein each of the finFET unit cells comprises: a substrate having a fin along a first direction; a first metal strip pattern and a second metal strip pattern on the fin, extending along a second direction that is different from the first direction, wherein the first and second metal strip patterns are conformally formed on opposite sidewalls and a top surface of the fin, respectively; a first contact and a second contact on the fin, wherein the first and second metal strip patterns are disposed between the first and second contacts; and a first dummy contact on the fin, sandwiched between the first and second metal strip patterns.