| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a programming method which allow a program rate to be enhanced. <P>SOLUTION: This memory device comprises a memory cell array which has memory cells disposed at intersection regions of word lines and bit lines, a row decoder circuit which provides a program voltage to a selected word line, a first verification circuit which verifies the success or failure of program of a programmed memory cell in a predetermined bit unit, a second verification circuit which verifies the success or failure of program of the memory cell located in the furthest distance from the row decoder circuit of verified memory cells, a controller which decides a level and applied time period of the program voltage applied to a following program loop in response to verification results of the first and second verification circuits, a word line voltage generating circuit which generates the program voltage corresponding to the determined level, and a word line driver which provides the program voltage generated from the word line voltage generating circuit to the row decoder circuit during the determined applied time period. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
