发明名称 PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress the generation of powder by improving hollow cathode effect and to improve the quality of a formed film. SOLUTION: At least a material gas of first pressure p1 and a material gas of second pressure p2 higher than the first pressure p1 are made introducible to a processing chamber 6, and a plasma discharging face 18 is comprised of a sectional tapered part 2a wherein a width between side walls gradually becomes smaller toward its bottom and a recessed groove 2b that is continuously formed on the bottom side of the plasma discharging face 18 in the tapered part 2a to form the bottom of the plasma discharge face 18. When assuming that a maximum width w1 of the tapered part 2a is d1 and a minimum width w2 is d2, the product of p1×d1 and the product of p2×d2 are≥0.2 Pa×m or more and≤1.0 Pa×m or less, respectively. The depth of the groove in the plasma discharging face 18 is regulated two times or more and three times or less an average value of the width of the tapered part 2a in the direction of depth. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008091407(A) 申请公布日期 2008.04.17
申请号 JP20060267674 申请日期 2006.09.29
申请人 SHARP CORP 发明人 MIYAZAKI ATSUSHI
分类号 H01L21/205;C23C16/455;H01L21/31 主分类号 H01L21/205
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