发明名称 |
Boron doped diamond |
摘要 |
<p>A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 µm, or has a volume exceeding 1 mm<Sup>3</Sup>, or a combination of such characteristics.</p> |
申请公布号 |
EP1780315(A3) |
申请公布日期 |
2010.02.24 |
申请号 |
EP20060076850 |
申请日期 |
2002.12.13 |
申请人 |
ELEMENT SIX LIMITED |
发明人 |
SCARSBROOK, GEOFFREY ALAN;MARTINEAU, PHILIP MAURICE;TWITCHEN, DANIEL JAMES;WHITEHEAD, ANDREW JOHN;COOPER, MICHAEL ANDREW;DORN, BARBEL SUSANNE CHARLOTTE |
分类号 |
C30B25/10;C30B29/04;C23C16/27 |
主分类号 |
C30B25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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