| 摘要 |
PROBLEM TO BE SOLVED: To provide a new and useful film formation method capable of forming a semiconductor film excellent in electric characteristics.SOLUTION: A precursor solution of a first semiconductor is atomized or made into droplets, the obtained mist or droplets are carried into a film formation chamber by carrier gas and the mist or the droplets are thermally reacted to form a first semiconductor film on a substrate installed in the film formation chamber. After insulating the first semiconductor film composed of the first semiconductor, a precursor solution of a second semiconductor is atomized or made into droplets, the obtained mist or droplets are carried into the film formation chamber by carrier gas and the mist or the droplets are thermally reacted in the film formation chamber to form a second semiconductor film composed of the second semiconductor on the insulated first semiconductor film.SELECTED DRAWING: None |
