| 摘要 |
In a semiconductor device having asymmetric bit lines and a method of manufacturing the same, a plurality of active regions are electrically isolated from one another by an isolation layer. Each active region extends in a first direction and has a central portion between end portions. The device includes a plurality of transistors, each including first impurity doped regions formed at the central portions and second impurity doped regions formed at both end portions to extend in a second direction different from the first direction. A plurality of asymmetric bit lines are electrically connected to the first impurity doped regions, each extending in a third direction substantially perpendicular to the second direction. Each asymmetric bit line has a first side surface extending in a straight line along the third direction, and a second side surface including a plurality of protrusions.
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