| 摘要 |
<p>A method for erase operations of a flash memory block. In one embodiment, a method comprises
applying at least one erase pulse to the block, wherein the block has a plurality of memory cells arranged in rows;
verifying each row to determine if the memory cells associated with each row are erased after each erase pulse; and
completing erase of the block when a predetermined number of rows in the block have been verified as being erased, wherein the predetermined number of rows is less than the total number of rows in the block.
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