| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing the occurrence of the problem caused by a stopper dielectric film. SOLUTION: The semiconductor device is provided with a first interlayer dielectric film 11, a second interlayer dielectric film 18 formed on the first interlayer dielectric film, a plug 13, which has a lower part surrounded by the first interlayer dielectric film and an upper part protruded from the first interlayer dielectric film while being surrounded by the second interlayer dielectric film, a wiring 21, which is formed in the second interlayer dielectric film and has a connection part connected to the plug and a non-connection part not connected to the plug, and the stopper dielectric film 12 which is formed in a region between the second interlayer dielectric film and the upper part of the plug being a region between the first interlayer dielectric film and the non-connection part of the wiring. COPYRIGHT: (C)2007,JPO&INPIT |
