| 摘要 |
A post processing apparatus of wasted gas generated in a process of manufacturing a semiconductor is provided to block direct contact between silicon and oxygen hydride among wasted gas in cooling of wasted gas of relative high temperature generated in a process of manufacturing a semiconductor so that there is no pollution level of exhaust gas which is ejected to outside since production of powder is prevented. A post processing apparatus of wasted gas generated in a process of manufacturing a semiconductor comprises a first influx unit(100), a circulation chamber(200), a supply pipe(300), a transmission pipe(210) and a second influx unit(400). The wasted gas flows into the inside of the first influx unit by a collector as a medium(110). In the outer circumference of the first influx unit, a heater(120) is installed. The circulation chamber is installed at the lower part of the first influx unit. The supply pipe is extended from the lower part of the first influx unit to the inside of the first influx. In the inside of the supply pipe, cooling water which cools and purifies the wasted gas flows. In the upper end of the supply pipe, a water spary(310) is installed so that the cooling water is emitted to the inside of the first influx unit. The transmission pipe is installed at the circulation chamber so that the wasted gas passing through the circulation chamber is ejected. In the second influx unit, the wasted gas ejected in the transmission pipe is flowed from the lower part and is ejected to the top. In the inside of the second influx unit, a filter for removing moisture(410) of the flowed wasted gas is installed.
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