| 摘要 |
<p>A semiconductive substrate (1) is described that is suitable for realising electronic and/or optoelectronic devices of the type comprising at least one substrate (3), in particular of single crystal silicon, and an overlying layer of single crystal silicon (5). Advantageously, according to the invention, the semiconductive substrate (1) comprises at least one functional coupling layer (10) suitable for reducing the defects linked to the differences in the materials used. In particular, the functional coupling layer 10 comprises a corrugated portion (6) made in the layer of single crystal silicon (5) and suitable for reducing the defects linked to the differences in lattice constant of such materials used. Alternatively, the functional coupling layer (10) comprises a porous layer (4) arranged between the substrate of single crystal silicon (3) and the layer of single crystal silicon (5) and suitable for reducing the stress caused by the differences between the thermal expansion coefficients of the materials used. A manufacturing process of such a semiconductive substrate is also described.</p> |
