Semiconductor devices including a stressor in a recess and methods of forming the same

摘要

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.

主权项

1. A semiconductor device comprising:
a substrate; a gate structure on the substrate; a spacer adjacent to a sidewall of the gate structure; and a semiconductor layer disposed adjacent to the sidewall of the gate structure and disposed in a recess that extends below an upper surface of the substrate, the semiconductor layer being a strain-inducing pattern, wherein a portion of the recess underlies the gate structure, wherein the semiconductor layer comprises a portion that is in the substrate and directly contacts a lower surface of the spacer, and an interface between the spacer and the portion of the semiconductor layer is not below a lower surface of the gate structure, and wherein the portion of the semiconductor layer comprises a first sidewall that has a linear shape and directly contacts the lower surface of the spacer, and the first sidewall of the portion of the semiconductor layer forms an acute angle with the lower surface of the spacer and extends beyond the sidewall of the gate structure.