发明名称 Chip comprising a phase change material based protecting device and a method of manufacturing the same
摘要 An electronic chip including an integrated circuit arranged a face of a substrate, and a protection device arranged partially facing the integrated circuit is provided. The protection device includes a capacitor having a first electrode and a second electrode between which a layer of phase change material is disposed changing locally from a first resistive state to a second resistive state different from the first state by penetration of a beam. The first state is an amorphous state wherein the capacitor has a first capacitance and/or a first resistance and the second state is a crystalline state wherein the capacitor has a second capacitance and/or a second resistance different from the first capacitance and first resistance. The protection device is electrically connected to the integrated circuit by at least one of the first or second electrodes so that the integrated circuit measures the resistance and/or capacitance of the capacitor.
申请公布号 US9520366(B2) 申请公布日期 2016.12.13
申请号 US201614996566 申请日期 2016.01.15
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 Lamy Yann;Perniola Luca
分类号 H01L23/00;H01L23/528;H01L27/24;H01L49/02 主分类号 H01L23/00
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. An electronic chip comprising an integrated circuit arranged on a substrate and a protection device arranged at least partially facing the integrated circuit, wherein the protection device comprises at least one capacitor comprising: a first electrode, a second electrode, and at least three stacked layers of phase-change materials, defiling at least two external layers and at least one internal layer interposed between said at least two external layers, wherein at least three stacked layers of phase-change materials are disposed at least partially between the two electrodes, wherein at least a first layer from said at least two external layers and said at least one internal layer is in an amorphous state and is configured so as to at least locally change from said amorphous state in which the capacitor has a first capacitance and/or a first resistance and to a crystalline state in which the capacitor has a second capacitance and/or a second resistance respectively different from the first capacitance and the first resistance, and wherein at least a second layer from said at least two external layers and said at least one internal layer is in a crystalline state, the protection device being electrically connected to the integrated circuit by at least one of said first or second electrodes so that the integrated circuit measures the resistance and/or capacitance of the capacitor.
地址 Paris FR