Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor

摘要

A photosensor pixel includes a thin film transistor (TFT) and a metal-insulator-semiconductor (MIS) photodetector. The TFT includes a gate, a gate insulator layer, a semiconductor layer forming a channel region, a drain, and a source. The MIS photodetector includes a transparent conductor layer, a semiconductor layer including a photosensitive semiconductor, and an insulator layer between the transparent conductor layer and the semiconductor layer. The semiconductor layer of the MIS photodetector is connected to the source or the drain of the TFT, and the thickness of the insulator layer of the MIS photodetector is less than the thickness of the gate insulator layer of the TFT.

主权项

1. A photosensor pixel comprising:
a thin film transistor (TFT), the TFT comprising:
a gate;a gate insulator layer;a semiconductor layer forming a channel region;a drain; anda source; and a metal-insulator-semiconductor (MIS) photodetector, the MIS photodetector comprising:
a transparent conductor layer;a semiconductor layer including a photosensitive semiconductor; andan insulator layer between the transparent conductor layer and the semiconductor layer, wherein
the semiconductor layer of the MIS photodetector is electrically connected to the source or the drain of the TFT, andthe thickness of the insulator layer of the MIS photodetector is less than the thickness of the gate insulator layer of the TFT.