发明名称 Semiconductor module and semiconductor device
摘要 A semiconductor module includes first and second semiconductor elements connected in series, an insulating substrate, first and second metal patterns formed on a first main surface and a second main surface of the insulating substrate, and first, second, and third electrode plates. A lower surface electrode and an upper surface electrode of the first semiconductor element are bonded to the first metal pattern and the first electrode plate, respectively. The first metal pattern and the third electrode plate are bonded together. An upper surface electrode of the second semiconductor element is bonded to the third electrode plate. A lower surface electrode of the second semiconductor element is electrically connected to the second metal pattern. The second metal pattern and the second electrode plate are bonded together. One end of the first electrode plate and one end of the second electrode plate are led out on the same side.
申请公布号 US9515061(B2) 申请公布日期 2016.12.06
申请号 US201514876230 申请日期 2015.10.06
申请人 Mitsubishi Electric Corporation 发明人 Inokuchi Seiichiro;Iizuka Arata
分类号 H01L29/15;H01L25/18;H01L23/367;H01L23/538;H01L29/861;H01L23/04;H01L23/492;H01L23/24;H01L23/36;H01L23/373;H01L23/498 主分类号 H01L29/15
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A semiconductor module comprising: a first semiconductor element and a second semiconductor element connected in series; an insulating substrate; a first metal pattern formed on a first main surface of said insulating substrate; a second metal pattern formed on a second main surface side of said insulating substrate; a first electrode plate; a second electrode plate; and a third electrode plate, wherein said first and second semiconductor elements each include an upper surface electrode and a lower surface electrode, said lower surface electrode of said first semiconductor element is bonded to said first metal pattern, said upper surface electrode of said first semiconductor element is bonded to said first electrode plate, said first metal pattern and said third electrode plate are bonded to each other, said upper surface electrode of said second semiconductor element is bonded to said third electrode plate, said lower surface electrode of said second semiconductor element is electrically connected to said second metal pattern, said second metal pattern and said second electrode plate are bonded to each other, and one end of said first electrode plate and one end of said second electrode plate are led out on the same side.
地址 Tokyo JP