发明名称 |
SEMICONDUCTOR DEVICES AND FABRICATION METHOD THEREOF |
摘要 |
A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate; and forming a first gate structure on the semiconductor substrate. The method also includes forming offset spacers doped with a certain type of ions to increase an anti-corrosion ability of the offset spacers on both sides of the first gate structure by a stability doping process; and forming trenches in the semiconductor substrate at both sides of the first gate structures. Further, the method includes forming stress layers in the trenches. |
申请公布号 |
US2016247922(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201615147397 |
申请日期 |
2016.05.05 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
HE YONGGEN |
分类号 |
H01L29/78;H01L21/8234;H01L29/45;H01L29/165;H01L21/027;H01L21/324;H01L21/02;H01L29/06;H01L29/66;H01L21/3115 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Shanghai CN |