发明名称 METHOD FOR FORMING NANOSTRUCTURE
摘要 Provided is a method of forming a nanostructure using surface plasmon resonance (SPR). The method includes forming a photo-resist layer on a substrate, forming nanostructure materials on the photo-resist layer, photo-sensitizing the photo-resist layer by irradiating light to the substrate on which nanostructure materials are formed, developing the photosensed photo-resist layer, and forming a nanostructure on the substrate by etching the substrate using the developed photo-resist layer. The method provides a high efficiency of manufacturing process and easy forming a nanostructure on a large area of substrate since the method applies SPR to nanostructure materials formed in advance on a photo-resist layer.
申请公布号 KR20050078017(A) 申请公布日期 2005.08.04
申请号 KR20040006114 申请日期 2004.01.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KHANG, YOON HO;CHOI, BYOUNG LYONG
分类号 G03F7/38;B81C1/00;B82B3/00;B82Y10/00;B82Y20/00;B82Y40/00;G03F1/14;G03F7/20;H01L21/027;H01L29/06 主分类号 G03F7/38
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