发明名称 |
DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT, AND POWER CONVERTER |
摘要 |
PROBLEM TO BE SOLVED: To obtain a drive circuit for a semiconductor switching element that facilitates the execution of desired switching control even if a gate threshold voltage of the semiconductor switching element deviates from a desired value, and a power converter that has no output imbalance between elements by easily and surely synchronizing switching-timing even when there are variations in gate threshold voltage of the parallel-connected semiconductor switching element. SOLUTION: The drive circuit for a semiconductor switching element has in a gate driving circuit 16c a means which detects a voltage between a gate and an emitter during a mirror period when the semiconductor switching element 1 is turned on as the gate threshold voltage, and a means which displaces emitter potential Ve corresponding to a difference between a gate threshold voltage reference value and the detected gate threshold voltage. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008048569(A) |
申请公布日期 |
2008.02.28 |
申请号 |
JP20060223839 |
申请日期 |
2006.08.21 |
申请人 |
MITSUBISHI ELECTRIC CORP;TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEM CORP |
发明人 |
HORIGUCHI GOJI;OI TAKESHI;NAKATAKE HIROSHI;TSUCHIYA TAICHIRO;YAMAGUCHI HIROAKI |
分类号 |
H02M1/08 |
主分类号 |
H02M1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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