发明名称 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT, AND POWER CONVERTER
摘要 PROBLEM TO BE SOLVED: To obtain a drive circuit for a semiconductor switching element that facilitates the execution of desired switching control even if a gate threshold voltage of the semiconductor switching element deviates from a desired value, and a power converter that has no output imbalance between elements by easily and surely synchronizing switching-timing even when there are variations in gate threshold voltage of the parallel-connected semiconductor switching element. SOLUTION: The drive circuit for a semiconductor switching element has in a gate driving circuit 16c a means which detects a voltage between a gate and an emitter during a mirror period when the semiconductor switching element 1 is turned on as the gate threshold voltage, and a means which displaces emitter potential Ve corresponding to a difference between a gate threshold voltage reference value and the detected gate threshold voltage. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008048569(A) 申请公布日期 2008.02.28
申请号 JP20060223839 申请日期 2006.08.21
申请人 MITSUBISHI ELECTRIC CORP;TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEM CORP 发明人 HORIGUCHI GOJI;OI TAKESHI;NAKATAKE HIROSHI;TSUCHIYA TAICHIRO;YAMAGUCHI HIROAKI
分类号 H02M1/08 主分类号 H02M1/08
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