发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER
摘要 A semiconductor light emitting device member which has excellent transparency, light resistance and heat resistance, and seals a semiconductor light emitting device without generating cracks and peeling even when used for a long period of time. The semiconductor light emitting device member wherein, (1) a solid-state Si magnetic resonance spectrum is provided with at least one peak selected from (i) a peak wherein a peak top position is in a region having a chemical shift of-40ppm or more but not more than 0ppm and a peak half value width is 0. 3ppm or more but not more than 3.0ppm, and (ii) a peak selected from a group composed of peaks wherein peak top positions are in a region having a chemical shift of-80ppm or more but less than-40ppm and a peak half value width is 0.3ppm or more but not more than 5.0ppm, (2) a silicon content rate is 20 wt.% or more, and (3) a silanol content is 0.1 wt.% or more but not more than 10 wt.%, is used.
申请公布号 KR20090028840(A) 申请公布日期 2009.03.19
申请号 KR20097003682 申请日期 2006.02.23
申请人 MITSUBISHI CHEMICAL CORPORATION 发明人 KATO HANAKO;MORI YUTAKA;KOBAYASHI HIROSHI;TOMURA TSUBASA
分类号 H01L33/56 主分类号 H01L33/56
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