| 摘要 |
A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150C or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150C or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor. |
