| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for driving a semiconductor device in which variations in the threshold voltage of a transistor and variations in mobility are reduced.SOLUTION: The semiconductor device includes a transistor and a capacitative element that is electrically connected to a gate of the transistor, and discharges the charges held by the capacitative element according to a voltage that is the sum of a voltage according to a threshold voltage of the transistor and a video signal voltage, via the transistor once, thereby reducing variations in a current flowing through the transistor or variations in the mobility of the transistor.SELECTED DRAWING: Figure 1 |
