METHOD OF CO-INTEGRATION OF STRAINED SILICON AND STRAINED GERMANIUM IN SEMICONDUCTOR DEVICES INCLUDING FIN STRUCTURES

摘要

A method of forming a semiconductor device that includes forming an at least partially relaxed semiconductor material, and forming a plurality of fin trenches in the partially relaxed semiconductor material. At least a portion of the plurality of fin trenches is filled with a first strained semiconductor material that is formed using epitaxial deposition. A remaining portion of the at least partially relaxed semiconductor material is removed to provide a plurality of fin structure of the first strained semiconductor material.

主权项

1. A method of forming a semiconductor device comprising:
forming a plurality of trenches in a semiconductor material; filling at least a portion of the plurality of trenches with a strained semiconductor material; and removing a remaining portion of the semiconductor material that provides sidewalls of the trenches to provide a plurality of fin structures of the strained semiconductor material.