METHOD OF ENABLING SEAMLESS COBALT GAP-FILL

摘要

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

主权项

1. A method for depositing a contact metal layer for forming a contact structure in a semiconductor device, comprising:
performing a barrier layer deposition process to deposit a barrier layer on a substrate; performing a wetting layer deposition process to deposit a wetting layer on the barrier layer; performing an annealing process on the wetting layer; performing a metal deposition process to deposit a contact metal layer on the wetting layer by exposing the wetting layer to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate; exposing the portion of the contact metal layer to a plasma treatment process; and annealing the contact metal layer deposited on the substrate.