发明名称 METAL Bi-Bi OXIDE COMPOUND SPUTTERING TARGET AND MANUFACTURING METHOD OF METAL Bi-Bi OXIDE COMPOUND SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a metal Bi-Bi oxide compound target having a sufficient high density, and capable of stably performing sputtering even if a metal Bi content is relatively small, and a manufacturing method of the metal Bi-Bi oxide compound target.SOLUTION: A sputtering target has a composition containing a metal Bi of 2-35 mol% and the rest of a Bi oxide and an inevitable impurity, a microstructure in which particles 12 of the metal Bi are scattered in a base material 11 of the Bi oxide, and a relative density of 80% or more to a theoretical density, the theoretical density being calculated from a density of the metal Bi, a density of the Bi oxide and the composition.SELECTED DRAWING: Figure 1
申请公布号 JP2016222971(A) 申请公布日期 2016.12.28
申请号 JP20150110036 申请日期 2015.05.29
申请人 MITSUBISHI MATERIALS CORP 发明人 NAGAO MASAYOSHI;YAMANAKA TOMIO
分类号 C23C14/34;B22F3/14;C22C29/12 主分类号 C23C14/34
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